Ge nanocrystals in alumina matrix: A structural study
نویسندگان
چکیده
منابع مشابه
Invited Review Paper STRUCTURAL AND OPTICAL PROPERTIES OF Si AND Ge NANOCRYSTALS EMBEDDED IN SiO2 MATRIX BY ION IMPLANTATION
It has been recently established that upon annealing at high temperatures impurity atoms implanted into SiO2 matrix precipitate and form crystal islands with nanometer size. These nanostructures are expected to have interesting electrical and optical properties which can be utilized in the production of new optoand micro-electronic devices. In this work, properties of Ge and Si nanocrystals for...
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The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient a2 and refractiv...
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We present the first colloidal synthesis of Ge-doped ZnO nanocrystals, which are produced by a scalable method that uses only air and moisture stable precursors. The incorporation of tetravalent Ge ions within ZnO nanocrystals generates a surface plasmon resonance in the near-mid infrared, and induces a change in morphology, from isotropic spheroidal nanocrystals to rod-like, elongated structur...
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Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO2) system have been studied based on the Ge content of co-sputtered Ge-SiO2 films using transmission electron microscopy (TEM) and Xray photoelectron spectroscopy (XPS). It was found that when the proportion of Ge relative to Ge oxide is 20%, TEM showed that annealing the samples at 800C for 60 min resulted in...
متن کاملNonlinear optical response of Ge nanocrystals in silica matrix with excitation of femtosecond pulses
We report an investigation of third-order optical nonlinearities in Ge nanocrystals (∼ 6 nm radius) embedded in silica matrix using the Z-scan and pump-probe techniques with femtosecond laser pulses at 780-nm wavelength. The nanocrystallite Ge samples were prepared using magnetron co-sputtering and post-thermal annealing at 800 ◦C. The nonlinear absorption coefficient and refractive index of th...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2010
ISSN: 1742-6596
DOI: 10.1088/1742-6596/209/1/012060